The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors
出版年份 2013 全文链接
标题
The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 16, Pages 164501
出版商
AIP Publishing
发表日期
2013-10-24
DOI
10.1063/1.4826524
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features
- (2013) Sukwon Choi et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors
- (2013) Sukwon Choi et al. JOURNAL OF APPLIED PHYSICS
- Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors
- (2012) Libing Li et al. APPLIED PHYSICS LETTERS
- Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias
- (2012) Matteo Meneghini et al. APPLIED PHYSICS LETTERS
- Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs
- (2012) Feng Gao et al. IEEE ELECTRON DEVICE LETTERS
- The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTs
- (2012) Sukwon Choi et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation
- (2012) M. G. Ancona et al. JOURNAL OF APPLIED PHYSICS
- Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors
- (2011) Feng Gao et al. APPLIED PHYSICS LETTERS
- Electric-Field-Driven Degradation in off-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors
- (2011) Chih-Yang Chang et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters
- (2011) Eric R. Heller et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Determination of mass density, dielectric, elastic, and piezoelectric constants of bulk GaN crystal
- (2011) W. Soluch et al. IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
- Deep Traps in AlGaN/GaN Heterostructure Field-Effect Transistors Studied by Current-Mode Deep-Level Transient Spectroscopy: Influence of Device Location
- (2011) Z.-Q. Fang et al. JOURNAL OF ELECTRONIC MATERIALS
- Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors
- (2011) E.A. Douglas et al. MICROELECTRONICS RELIABILITY
- Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors
- (2010) Prashanth Makaram et al. APPLIED PHYSICS LETTERS
- Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure
- (2010) Athikom Manoi et al. IEEE ELECTRON DEVICE LETTERS
- Elastic and piezoelectric properties of AlN and LiAlO2 single crystals
- (2010) Andrey V Sotnikov et al. IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
- Effect of substrate-induced strain in the transport properties of AlGaN/GaN heterostructures
- (2010) M. Azize et al. JOURNAL OF APPLIED PHYSICS
- High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate
- (2010) Sefa Demirtas et al. MICROELECTRONICS RELIABILITY
- A model for the critical voltage for electrical degradation of GaN high electron mobility transistors
- (2010) Jungwoo Joh et al. MICROELECTRONICS RELIABILITY
- AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress
- (2010) E.A. Douglas et al. MICROELECTRONICS RELIABILITY
- AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes
- (2010) Martin Kuball et al. MICROELECTRONICS RELIABILITY
- Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering
- (2010) A Sarua et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy
- (2009) T. Batten et al. JOURNAL OF APPLIED PHYSICS
- Assessment of stress contributions in GaN high electron mobility transistors of differing substrates using Raman spectroscopy
- (2009) Thomas Beechem et al. JOURNAL OF APPLIED PHYSICS
- Physical degradation of GaN HEMT devices under high drain bias reliability testing
- (2009) S.Y. Park et al. MICROELECTRONICS RELIABILITY
- GaN HEMT reliability
- (2009) J.A. del Alamo et al. MICROELECTRONICS RELIABILITY
- Three-dimensional finite-element thermal simulation of GaN-based HEMTs
- (2009) F. Bertoluzza et al. MICROELECTRONICS RELIABILITY
- Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
- (2008) Gaudenzio Meneghesso et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now