Germanium Based Field-Effect Transistors: Challenges and Opportunities

Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium

(2014) N. Jain et al.   JOURNAL OF APPLIED PHYSICS

Interfacial layer reduction and high permittivity tetragonal ZrO2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness

(2013) Cheng-Ming Lin et al.   APPLIED PHYSICS LETTERS

EOT Scaling of ${\rm TiO}_{2}/{\rm Al}_{2}{\rm O}_{3}$ on Germanium pMOSFETs and Impact of Gate Metal Selection

(2013) Liangliang Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Electrical Characterization of Gate Traps in FETs With Ge and III–V Channels

(2013) Xiao Sun et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy

(2013) D. Tetzlaff et al.   JOURNAL OF CRYSTAL GROWTH

Band offsets, Schottky barrier heights, and their effects on electronic devices

(2013) John Robertson   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Carbon-mediated growth of thin, fully relaxed germanium films on silicon

(2012) D. Tetzlaff et al.   APPLIED PHYSICS LETTERS

Selective-Area High-Quality Germanium Growth for Monolithic Integrated Optoelectronics

(2012) Hyun-Yong Yu et al.   IEEE ELECTRON DEVICE LETTERS

pMOSFET Performance Enhancement With Strained $ \hbox{Si}_{1 - x}\hbox{Ge}_{x}$ Channels

(2012) Byron Ho et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Considerations for Ultimate CMOS Scaling

(2012) K. J. Kuhn   IEEE TRANSACTIONS ON ELECTRON DEVICES

Challenges and opportunities in advanced Ge pMOSFETs

(2012) E. Simoen et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Germanium surface passivation and atomic layer deposition of high-kdielectrics—a tutorial review on Ge-based MOS capacitors

(2012) Qi Xie et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Tuning Schottky Barrier Height in Metal/n-Type Germanium by Inserting an Ultrathin Yttrium Oxide Film

(2012) Z. Li et al.   ECS Solid State Letters

High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

(2011) Tomonori Nishimura et al.   Applied Physics Express

Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates

(2011) Y.-T. Chen et al.   APPLIED PHYSICS LETTERS

Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height

(2011) J.-Y. Jason Lin et al.   APPLIED PHYSICS LETTERS

Highly strained-SiGe-on-insulator p-channel metal-oxide-semiconductor field-effective transistors fabricated by applying Ge condensation technique to strained-Si-on-insulator substrates

(2011) Junkyo Suh et al.   APPLIED PHYSICS LETTERS

The Effect of Donor/Acceptor Nature of Interface Traps on Ge MOSFET Characteristics

(2011) Duygu Kuzum et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Mobility Ge pMOSFET With 1-nm EOT $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation

(2011) Rui Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO2Interfacial Layers

(2011) Yosuke Nakakita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

(2011) H. B. Profijt et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Development of hafnium based high-k materials—A review

(2011) J.H. Choi et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Source and Drain Contacts for Germanium and III–V FETs for Digital Logic

(2011) Athanasios Dimoulas et al.   MRS BULLETIN

Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

(2011) Brian R. Bennett et al.   MRS BULLETIN

Academic and industry research progress in germanium nanodevices

(2011) Ravi Pillarisetty   NATURE

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

Ge-Photodetectors for Si-Based Optoelectronic Integration

(2011) Jian Wang et al.   SENSORS

Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors

(2010) O. Bethge et al.   APPLIED PHYSICS LETTERS

Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles

(2010) Takashi Ando et al.   APPLIED PHYSICS LETTERS

Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films

(2010) Yi Zhou et al.   APPLIED PHYSICS LETTERS

Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface

(2010) Silvia Baldovino et al.   APPLIED PHYSICS LETTERS

The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

(2010) H. D. Trinh et al.   APPLIED PHYSICS LETTERS

Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

(2010) Shankar Swaminathan et al.   APPLIED PHYSICS LETTERS

High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer

(2010) J. J. Gu et al.   APPLIED PHYSICS LETTERS

Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

(2010) A. Ali et al.   APPLIED PHYSICS LETTERS

GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

(2010) L. Hutin et al.   IEEE ELECTRON DEVICE LETTERS

Small-Signal Response of Inversion Layers in High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs Made With Thin High- $\kappa$ Dielectrics

(2010) Ashkar Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the High-Field Transport and Uniaxial Stress Effect in Ge PFETs

(2010) Masaharu Kobayashi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms

(2010) Duygu Kuzum et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   JOURNAL OF APPLIED PHYSICS

High-performance Ge-on-Si photodetectors

(2010) Jurgen Michel et al.   Nature Photonics

Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

(2009) Takuji Hosoi et al.   APPLIED PHYSICS LETTERS

High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate

(2009) M. Myronov et al.   APPLIED PHYSICS LETTERS

Fabrication of high Ge content SiGe-on-insulator with low dislocation density by modified Ge condensation

(2009) Xiaobo Ma et al.   APPLIED SURFACE SCIENCE

Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth

(2009) J.-S. Park et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

(2009) U. Singisetti et al.   IEEE ELECTRON DEVICE LETTERS

Low-Temperature Formation of High-Quality $ \hbox{GeO}_{2}$ Interlayer for High-$\kappa$ Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques

(2009) Yukio Fukuda et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

(2009) Takashi Sasada et al.   JOURNAL OF APPLIED PHYSICS

Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application

(2009) Masaharu Kobayashi et al.   JOURNAL OF APPLIED PHYSICS

The thermodynamic and ground state properties of the TIP4P water octamer

(2009) E. Asare et al.   JOURNAL OF CHEMICAL PHYSICS

The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge pMOSFETs

(2009) Matty Caymax et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

H[sub 2]O- and O[sub 3]-Based Atomic Layer Deposition of High-κ Dielectric Films on GeO[sub 2] Passivation Layers

(2009) A. Delabie et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs

(2009) Ashish K. Baraskar et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Germanium surface and interfaces (Invited Paper)

(2009) A. Dimoulas et al.   MICROELECTRONIC ENGINEERING

Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)

(2009) Akira Toriumi et al.   MICROELECTRONIC ENGINEERING

Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si

(2009) S. Kobayashi et al.   THIN SOLID FILMS

A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film

(2008) Tomonori Nishimura et al.   Applied Physics Express

Effects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxide-semiconductor with GeO2 surface passivation

(2008) Ruilong Xie et al.   APPLIED PHYSICS LETTERS

Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks

(2008) P. Tsipas et al.   APPLIED PHYSICS LETTERS

Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide

(2008) Yi Zhou et al.   APPLIED PHYSICS LETTERS

Ohmic contact formation on n-type Ge

(2008) R. R. Lieten et al.   APPLIED PHYSICS LETTERS

Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

(2008) Hiroshi Matsubara et al.   APPLIED PHYSICS LETTERS

Interface control of high-k gate dielectrics on Ge

(2008) M. Caymax et al.   APPLIED SURFACE SCIENCE

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

(2008) Duygu Kuzum et al.   IEEE ELECTRON DEVICE LETTERS

Thickness Dependence of Hole Mobility in Ultrathin SiGe-Channel p-MOSFETs

(2008) C.N. Chleirigh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

(2008) Koen Martens et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications

(2008) J. B. BOOS et al.   IEICE TRANSACTIONS ON ELECTRONICS

Remote phonon scattering in field-effect transistors with a high κ insulating layer

(2008) B. Laikhtman et al.   JOURNAL OF APPLIED PHYSICS

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

(2008) A. Giussani et al.   JOURNAL OF APPLIED PHYSICS

Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

(2008) G. Mavrou et al.   JOURNAL OF APPLIED PHYSICS

Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors

(2008) Brian R. Bennett et al.   JOURNAL OF CRYSTAL GROWTH

Low surface roughness and threading dislocation density Ge growth on Si (001)

(2008) Donghun Choi et al.   JOURNAL OF CRYSTAL GROWTH

InSb quantum-well structures for electronic device applications

(2008) M. Edirisooriya et al.   JOURNAL OF CRYSTAL GROWTH

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

(2008) D. P. Brunco et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)

(2008) Peide D. Ye   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

High-k/Ge MOSFETs for future nanoelectronics

(2008) Yoshiki Kamata   Materials Today

Passivation of Ge(100)∕GeO[sub 2]∕high-κ Gate Stacks Using Thermal Oxide Treatments

(2007) F. Bellenger et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY