Fabrication of high Ge content SiGe-on-insulator with low dislocation density by modified Ge condensation

出版年份 2009 全文链接

标题

作者

关键词

出版物

Volume 255, Issue 17, Pages 7743-7748

出版商

Elsevier BV

发表日期

2009-05-05

DOI

10.1016/j.apsusc.2009.04.162

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