EOT Scaling of ${\rm TiO}_{2}/{\rm Al}_{2}{\rm O}_{3}$ on Germanium pMOSFETs and Impact of Gate Metal Selection

标题
EOT Scaling of ${\rm TiO}_{2}/{\rm Al}_{2}{\rm O}_{3}$ on Germanium pMOSFETs and Impact of Gate Metal Selection
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 6, Pages 732-734
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2013-05-21
DOI
10.1109/led.2013.2259137

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