Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium
出版年份 2014 全文链接
标题
Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 115, Issue 2, Pages 024303
出版商
AIP Publishing
发表日期
2014-01-15
DOI
10.1063/1.4861137
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- (2013) Mantu K. Hudait et al. JOURNAL OF APPLIED PHYSICS
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- (2013) M. K. Hudait et al. JOURNAL OF APPLIED PHYSICS
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- (2013) M. K. Hudait et al. JOURNAL OF APPLIED PHYSICS
- Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer
- (2012) Prashanth Paramahans Manik et al. APPLIED PHYSICS LETTERS
- Germanium surface passivation and atomic layer deposition of high-kdielectrics—a tutorial review on Ge-based MOS capacitors
- (2012) Qi Xie et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height
- (2011) J.-Y. Jason Lin et al. APPLIED PHYSICS LETTERS
- TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer
- (2011) Qi Xie et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Development of hafnium based high-k materials—A review
- (2011) J.H. Choi et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer
- (2010) Qi Xie et al. APPLIED PHYSICS LETTERS
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- (2010) Shankar Swaminathan et al. APPLIED PHYSICS LETTERS
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- (2009) Masaharu Kobayashi et al. JOURNAL OF APPLIED PHYSICS
- Formation of an oxide-free Ge∕TiO2 interface by atomic layer deposition on brominated Ge
- (2008) Pendar Ardalan et al. APPLIED PHYSICS LETTERS
- Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide
- (2008) Yi Zhou et al. APPLIED PHYSICS LETTERS
- Energy band alignment at TiO2∕Si interface with various interlayers
- (2008) M. Perego et al. JOURNAL OF APPLIED PHYSICS
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