Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

标题
Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 4, Pages 328-330
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2008-03-28
DOI
10.1109/led.2008.918272

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