Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles

标题
Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 96, Issue 13, Pages 132904
出版商
AIP Publishing
发表日期
2010-04-02
DOI
10.1063/1.3373914

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