Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates

Electrical Characteristics of Germanium $\hbox{n}^{+}/ \hbox{p}$ Junctions Obtained Using Rapid Thermal Annealing of Coimplanted P and Sb

(2011) G Thareja et al.   IEEE ELECTRON DEVICE LETTERS

Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors

(2010) O. Bethge et al.   APPLIED PHYSICS LETTERS

High-Performance $\hbox{GeO}_{2}/\hbox{Ge}$ nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping

(2010) K. Morii et al.   IEEE ELECTRON DEVICE LETTERS

High FET Performance for a Future CMOS $\hbox{GeO}_{2}$ -Based Technology

(2010) Florence Bellenger et al.   IEEE ELECTRON DEVICE LETTERS

Uniaxial Stress Engineering for High-Performance Ge NMOSFETs

(2010) Masaharu Kobayashi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms

(2010) Duygu Kuzum et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Activation of Implanted n-Type Dopants in Ge Over the Active Concentration of 1×10[sup 20] cm[sup −3] Using Coimplantation of Sb and P

(2009) Jeehwan Kim et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Ge (100) and (111) N- and P-FETs With High Mobility and Low-$T$ Mobility Characterization

(2009) Duygu Kuzum et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxide-semiconductor with GeO2 surface passivation

(2008) Ruilong Xie et al.   APPLIED PHYSICS LETTERS