标题
Source and Drain Contacts for Germanium and III–V FETs for Digital Logic
作者
关键词
-
出版物
MRS BULLETIN
Volume 34, Issue 07, Pages 522-529
出版商
Cambridge University Press (CUP)
发表日期
2011-02-02
DOI
10.1557/mrs2009.140
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n+/p Junction
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