Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

标题
Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 103, Issue 1, Pages 014506
出版商
AIP Publishing
发表日期
2008-01-11
DOI
10.1063/1.2827499

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