The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge pMOSFETs

标题
The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge pMOSFETs
作者
关键词
-
出版物
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 156, Issue 12, Pages H979
出版商
The Electrochemical Society
发表日期
2009-10-28
DOI
10.1149/1.3240880

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