Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface

Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

(2009) Takashi Sasada et al.   JOURNAL OF APPLIED PHYSICS

Nontrigonal Ge dangling bond interface defect in condensation-grown(100)Si1−xGex/SiO2

(2009) A. Stesmans et al.   PHYSICAL REVIEW B

Evidence of dangling bond electrical activity at the Ge/oxide interface

(2008) Silvia Baldovino et al.   APPLIED PHYSICS LETTERS

Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2

(2008) M. Houssa et al.   APPLIED PHYSICS LETTERS

Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

(2008) Hiroshi Matsubara et al.   APPLIED PHYSICS LETTERS

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

(2008) Duygu Kuzum et al.   IEEE ELECTRON DEVICE LETTERS

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

(2008) Koen Martens et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Stability and interface quality of GeO2 films grown on Ge by atomic oxygen assisted deposition

(2008) Alessandro Molle et al.   JOURNAL OF CHEMICAL PHYSICS

An atomic view of Fermi level pinning of Ge(100) by O2

(2008) Tyler J. Grassman et al.   SURFACE SCIENCE

Passivation of Ge(100)∕GeO[sub 2]∕high-κ Gate Stacks Using Thermal Oxide Treatments

(2007) F. Bellenger et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY