$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

标题
$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 11, Pages 1128-1130
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2009-10-09
DOI
10.1109/led.2009.2031304

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