标题
Ge-Photodetectors for Si-Based Optoelectronic Integration
作者
关键词
-
出版物
SENSORS
Volume 11, Issue 1, Pages 696-718
出版商
MDPI AG
发表日期
2011-01-13
DOI
10.3390/s110100696
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Low Thermal Budget Monolithic Integration of Evanescent-Coupled Ge-on-SOI Photodetector on Si CMOS Platform
- (2010) Kah-Wee Ang et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects
- (2010) Solomon Assefa et al. NATURE
- Plasmonics for extreme light concentration and manipulation
- (2010) Jon A. Schuller et al. NATURE MATERIALS
- CMOS-integrated high-speed MSM germanium waveguide photodetector
- (2010) Solomon Assefa et al. OPTICS EXPRESS
- Ge-on-Si laser operating at room temperature
- (2010) Jifeng Liu et al. OPTICS LETTERS
- Ultralow dark current Ge/Si(100) photodiodes with low thermal budget
- (2009) J. Osmond et al. APPLIED PHYSICS LETTERS
- Waveguided Ge/Si Avalanche Photodiode With Separate Vertical SEG-Ge Absorption, Lateral Si Charge, and Multiplication Configuration
- (2009) Shiyang Zhu et al. IEEE ELECTRON DEVICE LETTERS
- 36-GHz High-Responsivity Ge Photodetectors Grown by RPCVD
- (2009) Dongwoo Suh et al. IEEE PHOTONICS TECHNOLOGY LETTERS
- Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz
- (2009) S. Klinger et al. IEEE PHOTONICS TECHNOLOGY LETTERS
- Ultra-low capacitance and high speed germanium photodetectors on silicon
- (2009) Long Chen et al. OPTICS EXPRESS
- 42 GHz pin Germanium photodetector integrated in a silicon-on-insulator waveguide
- (2009) Laurent Vivien et al. OPTICS EXPRESS
- Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides
- (2009) Ning-Ning Feng et al. OPTICS EXPRESS
- Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism
- (2008) H. Zang et al. APPLIED PHYSICS LETTERS
- Evanescent-Coupled Ge p-i-n Photodetectors on Si-Waveguide With SEG-Ge and Comparative Study of Lateral and Vertical p-i-n Configurations
- (2008) J. Wang et al. IEEE ELECTRON DEVICE LETTERS
- Novel NiGe MSM Photodetector Featuring Asymmetrical Schottky Barriers Using Sulfur Co-Implantation and Segregation
- (2008) Kah-Wee Ang et al. IEEE ELECTRON DEVICE LETTERS
- Novel Silicon-Carbon (Si:C) Schottky Barrier Enhancement Layer for Dark-Current Suppression in Ge-on-SOI MSM Photodetectors
- (2008) Kah-Wee Ang et al. IEEE ELECTRON DEVICE LETTERS
- Dark-Current Suppression in Metal–Germanium–Metal Photodetectors Through Dopant-Segregation in NiGe—Schottky Barrier
- (2008) H. Zang et al. IEEE ELECTRON DEVICE LETTERS
- High-Speed Metal–Germanium–Metal Configured PIN-Like Ge-Photodetector Under Photovoltaic Mode and With Dopant-Segregated Schottky-Contact Engineering
- (2008) Hui Zang et al. IEEE PHOTONICS TECHNOLOGY LETTERS
- Low-Voltage High-Speed (18 GHz/1 V) Evanescent-Coupled Thin-Film-Ge Lateral PIN Photodetectors Integrated on Si Waveguide
- (2008) J. Wang et al. IEEE PHOTONICS TECHNOLOGY LETTERS
- Low surface roughness and threading dislocation density Ge growth on Si (001)
- (2008) Donghun Choi et al. JOURNAL OF CRYSTAL GROWTH
- Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product
- (2008) Yimin Kang et al. Nature Photonics
- Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators
- (2008) Jifeng Liu et al. Nature Photonics
- Guided-wave photodetectors in germanium on SOI optical chips
- (2008) V. Sorianello et al. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
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