High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms - Peeref

标题

High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms

作者

关键词

-

出版物

IEEE TRANSACTIONS ON ELECTRON DEVICES

Volume 58, Issue 1, Pages 59-66

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2010-11-24

DOI

10.1109/ted.2010.2088124

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