Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures

A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory

(2012) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure

(2011) T. Nagata et al.   APPLIED PHYSICS LETTERS

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices

(2011) Christian Walczyk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Origin of resistivity change in NiO thin films studied by hard x-ray photoelectron spectroscopy

(2011) P. Calka et al.   JOURNAL OF APPLIED PHYSICS

Magnetometry of buried layers—Linear magnetic dichroism and spin detection in angular resolved hard X-ray photoelectron spectroscopy

(2011) Andrei Gloskovskii et al.   JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA

Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells

(2011) D. Walczyk et al.   MICROELECTRONIC ENGINEERING

Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

(2011) T. Bertaud et al.   THIN SOLID FILMS

Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks

(2010) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Impact of Engineered Ti Layer on the Memory Performance of HfO[sub x]-Based Resistive Memory

(2010) Pang-Shiu Chen et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

An Ultrathin Forming-Free $\hbox{HfO}_{x}$ Resistance Memory With Excellent Electrical Performance

(2010) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices

(2009) Min Kyu Yang et al.   APPLIED PHYSICS LETTERS

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

(2009) Ch. Walczyk et al.   JOURNAL OF APPLIED PHYSICS

Influence of the electrode material on HfO[sub 2] metal-insulator-metal capacitors

(2009) Ch. Wenger et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today