Multilevel Switching in Forming-Free Resistive Memory Devices With Atomic Layer Deposited ${\rm HfTiO}_{x}$ Nanolaminate

Published 2013 View Full Article

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Title
Multilevel Switching in Forming-Free Resistive Memory Devices With Atomic Layer Deposited ${\rm HfTiO}_{x}$ Nanolaminate
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 7, Pages 867-869
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2013-06-13
DOI
10.1109/led.2013.2262917

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