In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy

A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory

(2012) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories

(2012) F. De Stefano et al.   APPLIED PHYSICS LETTERS

Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures

(2012) M. Sowinska et al.   APPLIED PHYSICS LETTERS

ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels

(2012) Katsumasa Kamiya et al.   APPLIED PHYSICS LETTERS

Probing the oxygen vacancy distribution in resistive switching Fe-SrTiO3 metal-insulator-metal-structures by micro-x ray absorption near-edge structure

(2012) Ch. Lenser et al.   JOURNAL OF APPLIED PHYSICS

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure

(2011) T. Nagata et al.   APPLIED PHYSICS LETTERS

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices

(2011) Christian Walczyk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Origin of resistivity change in NiO thin films studied by hard x-ray photoelectron spectroscopy

(2011) P. Calka et al.   JOURNAL OF APPLIED PHYSICS

Magnetometry of buried layers—Linear magnetic dichroism and spin detection in angular resolved hard X-ray photoelectron spectroscopy

(2011) Andrei Gloskovskii et al.   JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA

Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells

(2011) D. Walczyk et al.   MICROELECTRONIC ENGINEERING

Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching

(2010) J. Joshua Yang et al.   ADVANCED MATERIALS

Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks

(2010) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4Thin Films

(2009) Keisuke Shibuya et al.   ADVANCED MATERIALS

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

(2009) Ch. Walczyk et al.   JOURNAL OF APPLIED PHYSICS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today