Transport properties of HfO2−xbased resistive-switching memories

Materials, technologies, and circuit concepts for nanocrossbar-based bipolar RRAM

(2011) Carsten Kügeler et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments

(2011) Gun Hwan Kim et al.   APPLIED PHYSICS LETTERS

A Detailed Study of the Forming Stage of an Electrochemical Resistive Switching Memory by KMC Simulation

(2011) Feng Pan et al.   IEEE ELECTRON DEVICE LETTERS

The Observation of “Conduction Spot” on NiO Resistance Random Access Memory

(2011) Hirofumi Kondo et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

TiO2—a prototypical memristive material

(2011) K Szot et al.   NANOTECHNOLOGY

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

(2010) L. Goux et al.   APPLIED PHYSICS LETTERS

Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy

(2010) Min Hwan Lee et al.   APPLIED PHYSICS LETTERS

Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$-Based RRAM Devices

(2010) Z Fang et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory

(2010) Seong-Geon Park et al.   IEEE ELECTRON DEVICE LETTERS

Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching

(2010) In Kyeong Yoo et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Resistance switching in HfO2 metal-insulator-metal devices

(2010) P. Gonon et al.   JOURNAL OF APPLIED PHYSICS

Polaron transport in TiO2 thin films

(2010) Abdullah Yildiz et al.   JOURNAL OF APPLIED PHYSICS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2

(2009) Keith McKenna et al.   APPLIED PHYSICS LETTERS

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

(2009) Ch. Walczyk et al.   JOURNAL OF APPLIED PHYSICS

Physicochemical and electrical characterizations of atomic layer deposition grown HfO[sub 2] on TiN and Pt for metal-insulator-metal application

(2009) C. Jorel et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Oxygen defect induced photoluminescence of HfO2 thin films

(2008) Jie Ni et al.   APPLIED PHYSICS LETTERS

The nature of dielectric breakdown

(2008) X. Li et al.   APPLIED PHYSICS LETTERS

Segregation of oxygen vacancy at metal-HfO2 interfaces

(2008) Eunae Cho et al.   APPLIED PHYSICS LETTERS

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

(2008) Nuo Xu et al.   APPLIED PHYSICS LETTERS

Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

(2008) Yong-Mu Kim et al.   JOURNAL OF APPLIED PHYSICS

Non-Debye to Debye transition of ac dielectric response in YCrO3nanoceramic under sintering: effect of pore structure

(2008) J Bahadur et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Electric-field-induced submicrosecond resistive switching

(2008) N. Das et al.   PHYSICAL REVIEW B

Generalized Adiabatic Polaron Hopping: Meyer-Neldel Compensation and Poole-Frenkel Behavior

(2008) David Emin   PHYSICAL REVIEW LETTERS