$\hbox{HfO}_{x}/\hbox{TiO}_{x}/\hbox{HfO}_{x}/ \hbox{TiO}_{x}$ Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity

Ionic doping effect in ZrO2 resistive switching memory

(2010) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$-Based RRAM Devices

(2010) Z Fang et al.   IEEE ELECTRON DEVICE LETTERS

Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer

(2010) Hangbing Lv et al.   IEEE ELECTRON DEVICE LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

(2009) Jaesik Yoon et al.   IEEE ELECTRON DEVICE LETTERS

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

(2009) H.Y. Lee et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today