Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films

Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant

(2016) M. Ismail et al.   ACS Applied Materials & Interfaces

Metal-Organic Framework Nanofilm for Mechanically Flexible Information Storage Applications

(2015) Liang Pan et al.   ADVANCED FUNCTIONAL MATERIALS

An analysis of “non-lattice” oxygen concentration effect on electrical endurance characteristic in resistive switching MnOx thin film

(2015) Min Kyu Yang et al.   APPLIED PHYSICS LETTERS

On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying

(2015) Boubacar Traore et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High mechanical endurance RRAM based on amorphous gadolinium oxide for flexible nonvolatile memory application

(2015) Hongbin Zhao et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Improved resistive switching characteristics by introducing Ag-nanoclusters in amorphous-carbon memory

(2015) Lei Zhang et al.   MATERIALS LETTERS

Pressure-induced novel compounds in the Hf-O system from first-principles calculations

(2015) Jin Zhang et al.   PHYSICAL REVIEW B

Impact of program/erase operation on the performances of oxide-based resistive switching memory

(2015) Guoming Wang et al.   Nanoscale Research Letters

Associative Learning with Temporal Contiguity in a Memristive Circuit for Large-Scale Neuromorphic Networks

(2015) Yi Li et al.   Advanced Electronic Materials

Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory

(2014) José Ramón Durán Retamal et al.   APPLIED PHYSICS LETTERS

Ion transport-related resistive switching in film sandwich structures

(2014) Xiao-Jian Zhu et al.   CHINESE SCIENCE BULLETIN

Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film

(2014) Jyun-Bao Yang et al.   IEEE ELECTRON DEVICE LETTERS

A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in ${\rm Pt}/{\rm Hf}{\rm O}_{2}/{\rm Pt}$ Resistive Random Access Memory

(2014) Kan-Hao Xue et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Operation methods of resistive random access memory

(2014) GuoMing Wang et al.   Science China-Technological Sciences

RESET-first unipolar resistance switching behavior in annealed Nb2O5 films

(2014) Kyumin Lee et al.   THIN SOLID FILMS

Polymer memristor for information storage and neuromorphic applications

(2014) Yu Chen et al.   Materials Horizons

High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems

(2013) Hsiao-Yu Chang et al.   ACS Nano

Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures

(2013) Jie Shang et al.   ADVANCED FUNCTIONAL MATERIALS

Enhancement of the stability of resistive switching characteristics by conduction path reconstruction

(2013) Jheng-Jie Huang et al.   APPLIED PHYSICS LETTERS

Conductance quantization in oxygen-anion-migration-based resistive switching memory devices

(2013) C. Chen et al.   APPLIED PHYSICS LETTERS

Grain boundary composition and conduction in HfO2: An ab initio study

(2013) K.-H. Xue et al.   APPLIED PHYSICS LETTERS

Bipolar ${\rm Ni}/{\rm TiO}_{2}/{\rm HfO}_{2}/{\rm Ni}$ RRAM With Multilevel States and Self-Rectifying Characteristics

(2013) Chung-Wei Hsu et al.   IEEE ELECTRON DEVICE LETTERS

Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories

(2013) Jui-Yuan Chen et al.   NANO LETTERS

Prediction of Semimetallic TetragonalHf2O3andZr2O3from First Principles

(2013) Kan-Hao Xue et al.   PHYSICAL REVIEW LETTERS

Ultrafast Synaptic Events in a Chalcogenide Memristor

(2013) Yi Li et al.   Scientific Reports

Can We Build a Truly High Performance Computer Which is Flexible and Transparent?

(2013) Jhonathan P. Rojas et al.   Scientific Reports

Aluminum Electrode Modulated Bipolar Resistive Switching of Al/Fuel-Assisted NiOx/ITO Memory Devices Modeled with a Dual-Oxygen-Reservoir Structure

(2012) Kun-Keng Chiang et al.   ACS Applied Materials & Interfaces

High-Performance Non-Volatile Organic Ferroelectric Memory on Banknotes

(2012) M.A. Khan et al.   ADVANCED MATERIALS

Flexible Non-Volatile Ferroelectric Polymer Memory with Gate-Controlled Multilevel Operation

(2012) Sun Kak Hwang et al.   ADVANCED MATERIALS

Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices

(2012) M. G. Cao et al.   APPLIED PHYSICS LETTERS

Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure

(2012) C. Chen et al.   APPLIED PHYSICS LETTERS

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

A poly(fluorene-thiophene) donor with a tethered phenanthro[9,10-d]imidazole acceptor for flexible nonvolatile flash resistive memory devices

(2012) Hung-Chin Wu et al.   CHEMICAL COMMUNICATIONS

Improving the electrical performance of resistive switching memory using doping technology

(2012) Yan Wang et al.   CHINESE SCIENCE BULLETIN

Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition

(2012) Ching-Shiang Peng et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Superior TID Hardness in TiN/HfO$_{2}$/TiN ReRAMs After Proton Radiation

(2012) Xiaoli He et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Emerging memories: resistive switching mechanisms and current status

(2012) Doo Seok Jeong et al.   REPORTS ON PROGRESS IN PHYSICS

Resistive switching characteristics of a Pt nanoparticle-embedded SiO2-based memory

(2012) Chih-Yi Liu et al.   THIN SOLID FILMS

Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene

(2012) Jun Yao et al.   Nature Communications

Overcoming The Water Vulnerability Of Electronic Devices: A Highly Water-Resistant ZnO Nanodevice With Multifunctionality

(2011) Seunghyup Lee et al.   ADVANCED MATERIALS

Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure

(2011) T. Nagata et al.   APPLIED PHYSICS LETTERS

Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application

(2011) Kuyyadi P. Biju et al.   CURRENT APPLIED PHYSICS

Roles and Effects of TiN and Pt Electrodes in Resistive-Switching HfO2 Systems

(2011) L. Goux et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

An Indium-Free Transparent Resistive Switching Random Access Memory

(2011) K. Zheng et al.   IEEE ELECTRON DEVICE LETTERS

Noise-Analysis-Based Model of Filamentary Switching ReRAM With $\hbox{ZrO}_{x}/\hbox{HfO}_{x}$ Stacks

(2011) Daeseok Lee et al.   IEEE ELECTRON DEVICE LETTERS

Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film With Excellent Mechanical Endurance

(2011) Z. Q. Wang et al.   IEEE ELECTRON DEVICE LETTERS

Chemistry of Ruddlesden–Popper planar faults at a ferroelectric–ferromagnet perovskite interface

(2011) M. Arredondo et al.   JOURNAL OF APPLIED PHYSICS

In situ electro-mechanical experiments and mechanics modeling of tensile cracking in indium tin oxide thin films on polyimide substrates

(2011) Cheng Peng et al.   JOURNAL OF APPLIED PHYSICS

Critical tensile and compressive strains for cracking of Al2O3 films grown by atomic layer deposition

(2011) Shih-Hui Jen et al.   JOURNAL OF APPLIED PHYSICS

Flexible Memristive Memory Array on Plastic Substrates

(2011) Seungjun Kim et al.   NANO LETTERS

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

NiO Resistive Random Access Memory Nanocapacitor Array on Graphene

(2010) Jong Yeog Son et al.   ACS Nano

Stretchable, Large-area Organic Electronics

(2010) Tsuyoshi Sekitani et al.   ADVANCED MATERIALS

Catalytic activity for methane combustion of the perovskite-type La1−xSrxCoO3−δ oxide prepared by the urea decomposition method

(2010) Zhiming Gao et al.   APPLIED CATALYSIS B-ENVIRONMENTAL

Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory

(2010) Min-Chen Chen et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

An Ultrathin Forming-Free $\hbox{HfO}_{x}$ Resistance Memory With Excellent Electrical Performance

(2010) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

Young’s modulus and density measurements of thin atomic layer deposited films using resonant nanomechanics

(2010) B. Ilic et al.   JOURNAL OF APPLIED PHYSICS

Bipolar resistive switching effect in Gd2O3 films for transparent memory application

(2010) Kou-Chen Liu et al.   MICROELECTRONIC ENGINEERING

Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications

(2010) Hu Young Jeong et al.   NANO LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Improved switching characteristics of perovskite oxide-based resistance random access memory by high-pressure oxygen annealing at low temperature

(2010) Wootae Lee et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

The conical shape filament growth model in unipolar resistance switching of TiO2 thin film

(2009) Kyung Min Kim et al.   APPLIED PHYSICS LETTERS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE