Grain boundary composition and conduction in HfO2: An ab initio study

Prediction of Semimetallic TetragonalHf2O3andZr2O3from First Principles

(2013) Kan-Hao Xue et al.   PHYSICAL REVIEW LETTERS

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

Grain boundary mediated leakage current in polycrystalline HfO2 films

(2011) K. McKenna et al.   MICROELECTRONIC ENGINEERING

The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2

(2009) Keith McKenna et al.   APPLIED PHYSICS LETTERS

Electronic properties of defects in polycrystalline dielectric materials

(2009) K.P. McKenna et al.   MICROELECTRONIC ENGINEERING