Improved switching characteristics of perovskite oxide-based resistance random access memory by high-pressure oxygen annealing at low temperature

Authors

Keywords

Journal

Volume 208, Issue 1, Pages 202-205

Publisher

Wiley

Online

2010-10-15

DOI

10.1002/pssa.201026559

References

View 5 related references

Explore over 38,000 international journals covering a vast array of academic fields.

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started