Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

(2011) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

$\hbox{HfO}_{x}/\hbox{TiO}_{x}/\hbox{HfO}_{x}/ \hbox{TiO}_{x}$ Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity

(2011) Z. Fang et al.   IEEE ELECTRON DEVICE LETTERS

Polarity of Bipolar Resistive Switching Characteristics in ZnO Memory Films

(2011) Wen-Yuan Chang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

(2011) D Ielmini et al.   NANOTECHNOLOGY

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

(2010) Joonmyoung Lee et al.   APPLIED PHYSICS LETTERS

Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories With Superior Performance

(2010) Lin Chen et al.   IEEE ELECTRON DEVICE LETTERS

Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$-Based RRAM Devices

(2010) Z Fang et al.   IEEE ELECTRON DEVICE LETTERS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Mechanism for bipolar resistive switching in transition-metal oxides

(2010) M. J. Rozenberg et al.   PHYSICAL REVIEW B

Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

(2009)   APPLIED PHYSICS LETTERS