Improved resistive switching characteristics by introducing Ag-nanoclusters in amorphous-carbon memory

Published 2015 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Improved resistive switching characteristics by introducing Ag-nanoclusters in amorphous-carbon memory
Authors
Keywords
Resistive random access memory (RRAM), Structural, Carbon materials, Embedding of Ag nanoclusters, Tip electrode, Improved switching uniformity
Journal
MATERIALS LETTERS
Volume 154, Issue -, Pages 98-102
Publisher
Elsevier BV
Online
2015-04-21
DOI
10.1016/j.matlet.2015.04.052

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.