Flexible Non-Volatile Ferroelectric Polymer Memory with Gate-Controlled Multilevel Operation
Published 2012 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Flexible Non-Volatile Ferroelectric Polymer Memory with Gate-Controlled Multilevel Operation
Authors
Keywords
-
Journal
ADVANCED MATERIALS
Volume 24, Issue 44, Pages 5910-5914
Publisher
Wiley
Online
2012-08-09
DOI
10.1002/adma.201201831
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures
- (2011) Byungjin Cho et al. ADVANCED FUNCTIONAL MATERIALS
- Anodized Aluminum Oxide Thin Films for Room-Temperature-Processed, Flexible, Low-Voltage Organic Non-Volatile Memory Elements with Excellent Charge Retention
- (2011) Martin Kaltenbrunner et al. ADVANCED MATERIALS
- Multilevel Information Storage in Ferroelectric Polymer Memories
- (2011) Ashutosh K. Tripathi et al. ADVANCED MATERIALS
- Multilevel Data Storage Memory Devices Based on the Controlled Capacitive Coupling of Trapped Electrons
- (2011) Jang-Sik Lee et al. ADVANCED MATERIALS
- The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)
- (2011) Gwang-Geun Lee et al. APPLIED PHYSICS LETTERS
- Retention mechanism study of the ferroelectric field effect transistor
- (2011) Xiao Pan et al. APPLIED PHYSICS LETTERS
- A 60 nm channel length ferroelectric-gate field-effect transistor capable of fast switching and multilevel programming
- (2011) Yukihiro Kaneko et al. APPLIED PHYSICS LETTERS
- Highly reproducible memory effect of organic multilevel resistive-switch device utilizing graphene oxide sheets/polyimide hybrid nanocomposite
- (2011) Chaoxing Wu et al. APPLIED PHYSICS LETTERS
- Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In–Ga–Zn oxide-based ferroelectric memory transistor
- (2010) Sung-Min Yoon et al. APPLIED PHYSICS LETTERS
- Control of thin ferroelectric polymer films for non-volatile memory applications
- (2010) Youn Park et al. IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION
- A field-cycle-induced high-dielectric phase in ferroelectric copolymer
- (2010) Koichiro Zaitsu et al. JOURNAL OF APPLIED PHYSICS
- Ferroelectric field effect transistors using very thin ferroelectric polyvinylidene fluoride copolymer films as gate dielectrics
- (2010) A. Gerber et al. JOURNAL OF APPLIED PHYSICS
- Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire
- (2010) Kazuki Nagashima et al. NANO LETTERS
- Nonvolatile Polymer Memory with Nanoconfinement of Ferroelectric Crystals
- (2010) Seok Ju Kang et al. NANO LETTERS
- Ferroelectric Transistors with Nanowire Channel: Toward Nonvolatile Memory Applications
- (2009) L. Liao et al. ACS Nano
- Non-volatile Ferroelectric Poly(vinylidene fluoride-co-trifluoroethylene) Memory Based on a Single-Crystalline Tri-isopropylsilylethynyl Pentacene Field-Effect Transistor
- (2009) Seok Ju Kang et al. ADVANCED FUNCTIONAL MATERIALS
- Printable Ferroelectric PVDF/PMMA Blend Films with Ultralow Roughness for Low Voltage Non-Volatile Polymer Memory
- (2009) Seok Ju Kang et al. ADVANCED FUNCTIONAL MATERIALS
- Gate-controlled nonvolatile graphene-ferroelectric memory
- (2009) Yi Zheng et al. APPLIED PHYSICS LETTERS
- Multilevel resistive switching with ionic and metallic filaments
- (2009) Ming Liu et al. APPLIED PHYSICS LETTERS
- Printed Nonvolatile Memory for a Sheet-Type Communication System
- (2009) Tsuyoshi Sekitani et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Multilevel Nonvolatile Small-Molecule Memory Cell Embedded with Ni Nanocrystals Surrounded by a NiO Tunneling Barrier
- (2009) Jea-Gun Park et al. NANO LETTERS
- Polymeric gate dielectric interlayer of cross-linkable poly(styrene-r-methylmethacrylate) copolymer for ferroelectric PVDF-TrFE field effect transistor memory
- (2009) Jiyoun Chang et al. ORGANIC ELECTRONICS
- Pentacene-Based Low-Leakage Memory Transistor with Dielectric/Electrolytic/Dielectric Polymer Layers
- (2008) Wonjun Choi et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectric
- (2008) C.A. Nguyen et al. ORGANIC ELECTRONICS
- Switching between different conformers of a molecule: Multilevel memory elements
- (2007) Bikas C. Das et al. ORGANIC ELECTRONICS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search