Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film With Excellent Mechanical Endurance

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

(2010) Min-Chen Chen et al.   APPLIED PHYSICS LETTERS

Flexible Resistive Switching Memory Device Based on Graphene Oxide

(2010) Seul Ki Hong et al.   IEEE ELECTRON DEVICE LETTERS

Effects of compliance currents on the formation and rupture of conducting filaments in unipolar resistive switching of CoO film

(2010) Z Q Wang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Resistive Switching Characteristics of Sol–Gel Zinc Oxide Films for Flexible Memory Applications

(2009) Sungho Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

(2008) Weihua Guan et al.   APPLIED PHYSICS LETTERS

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

(2008) Jung Won Seo et al.   APPLIED PHYSICS LETTERS