Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics

(2013) An Chen   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of electrode material and configuration on the characteristics of planar resistive switching devices

(2013) H. Y. Peng et al.   APL Materials

Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation

(2012) Hai Yang Peng et al.   Scientific Reports

Improved resistance switching in ZnO-based devices decorated with Ag nanoparticles

(2011) L Shi et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Thermal stability of SrTiO3/SiO2/Si Interfaces at Intermediate Oxygen Pressures

(2010) G. J. Yong et al.   JOURNAL OF APPLIED PHYSICS

High aspect ratio silicon etch: A review

(2010) Banqiu Wu et al.   JOURNAL OF APPLIED PHYSICS