Forming-free RRAM device based on HfO2 thin film for non-volatile memory application using E-beam evaporation method
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Title
Forming-free RRAM device based on HfO2 thin film for non-volatile memory application using E-beam evaporation method
Authors
Keywords
-
Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 34, Issue 4, Pages -
Publisher
Springer Science and Business Media LLC
Online
2023-01-26
DOI
10.1007/s10854-022-09809-y
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