Studies on RF magnetron sputtered HfO2 thin films for microelectronic applications
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Title
Studies on RF magnetron sputtered HfO2 thin films for microelectronic applications
Authors
Keywords
reactive RF magnetron sputtering, optical properties, flat band voltage
Journal
Electronic Materials Letters
Volume 11, Issue 4, Pages 592-600
Publisher
Springer Nature
Online
2015-06-30
DOI
10.1007/s13391-015-4490-6
References
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- (2013) P. Kondaiah et al. Science of Advanced Materials
- Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures
- (2012) A. Domanowska et al. APPLIED SURFACE SCIENCE
- Effect of hydrogen participation on the improvement in electrical characteristics of HfO2gate dielectrics by post-deposition remote N2, N2/H2, and NH3plasma treatments
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- (2010) L Khomenkova et al. NANOTECHNOLOGY
- Structure and optical properties of HfO2 thin films on silicon after rapid thermal annealing
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- (2009) Boris Ayupov et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Effects of ozone oxidation on interfacial and dielectric properties of thin HfO2 films
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- High k dielectrics for low temperature electronics
- (2007) L. Pereira et al. THIN SOLID FILMS
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