Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing
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Title
Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing
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Keywords
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Journal
Nanomaterials
Volume 10, Issue 3, Pages 457
Publisher
MDPI AG
Online
2020-03-04
DOI
10.3390/nano10030457
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Note: Only part of the references are listed.- Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process
- (2019) Chao-Feng Liu et al. Nanomaterials
- Highly uniform switching of HfO 2−x based RRAM achieved through Ar plasma treatment for low power and multilevel storage
- (2018) Meng Qi et al. APPLIED SURFACE SCIENCE
- Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory
- (2018) Hao-Xuan Zheng et al. IEEE ELECTRON DEVICE LETTERS
- Oxide-based RRAM materials for neuromorphic computing
- (2018) XiaoLiang Hong et al. JOURNAL OF MATERIALS SCIENCE
- Carbon nanomaterials for non-volatile memories
- (2018) Ethan C. Ahn et al. Nature Reviews Materials
- 2D Materials: Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials (Small 35/2017)
- (2017) Yu Li et al. Small
- Graphene/h-BN Heterostructures for Vertical Architecture of RRAM Design
- (2017) Yi-Jen Huang et al. Scientific Reports
- Self-compliance multilevel storage characteristic in HfO2-based device
- (2016) Xiao-Ping Gao et al. Chinese Physics B
- Resistance random access memory
- (2016) Ting-Chang Chang et al. Materials Today
- A flexible organic resistance memory device for wearable biomedical applications
- (2016) Yimao Cai et al. NANOTECHNOLOGY
- Physical and chemical mechanisms in oxide-based resistance random access memory
- (2015) Kuan-Chang Chang et al. Nanoscale Research Letters
- Formation and disruption of conductive filaments in a HfO2/TiN structure
- (2014) S Brivio et al. NANOTECHNOLOGY
- Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices
- (2013) Y. S. Lin et al. JOURNAL OF APPLIED PHYSICS
- Bipolar one diode–one resistor integration for high-density resistive memory applications
- (2013) Yingtao Li et al. Nanoscale
- Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures
- (2012) M. Sowinska et al. APPLIED PHYSICS LETTERS
- Roles and Effects of TiN and Pt Electrodes in Resistive-Switching HfO2 Systems
- (2011) L. Goux et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Investigation of Surface Sputtering and Post Annealing Effects on Atomic Layer Deposited ${\rm HfO}_{2}$ and ${\rm TiO}_{2}$
- (2011) Qian Tao et al. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
- Developments in nanocrystal memory
- (2011) Ting-Chang Chang et al. Materials Today
- A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications
- (2011) Kuk-Hwan Kim et al. NANO LETTERS
- Resistive Random Access Memory (ReRAM) Based on Metal Oxides
- (2010) Hiroyuki Akinaga et al. PROCEEDINGS OF THE IEEE
- $\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode
- (2009) Heng Yuan Lee et al. IEEE ELECTRON DEVICE LETTERS
- Effects of metal electrodes on the resistive memory switching property of NiO thin films
- (2008) C. B. Lee et al. APPLIED PHYSICS LETTERS
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
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