Forming-free RRAM device based on HfO2 thin film for non-volatile memory application using E-beam evaporation method
出版年份 2023 全文链接
标题
Forming-free RRAM device based on HfO2 thin film for non-volatile memory application using E-beam evaporation method
作者
关键词
-
出版物
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 34, Issue 4, Pages -
出版商
Springer Science and Business Media LLC
发表日期
2023-01-26
DOI
10.1007/s10854-022-09809-y
参考文献
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