Flexible resistive switching memory based on Mn0.20Zn0.80O/HfO2bilayer structure

Title
Flexible resistive switching memory based on Mn0.20Zn0.80O/HfO2bilayer structure
Authors
Keywords
-
Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 44, Issue 44, Pages 445101
Publisher
IOP Publishing
Online
2011-10-18
DOI
10.1088/0022-3727/44/44/445101

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