Effect of crystallinity on the performance of AlN-based resistive random access memory using rapid thermal annealing

Thermal annealing of AlN films for piezoelectric applications

(2020) Etienne Herth et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Effect of thickness of metal electrode on the performance of SiNx-based resistive switching devices

(2019) Zhen Fei Zhang et al.   APPLIED PHYSICS LETTERS

Nonlinear resistive switching features of rapid-thermal-annealed aluminum nitride dielectrics with modified charge trapping behaviors

(2019) Yi Fu et al.   MICROELECTRONIC ENGINEERING

Effects of Film Orientation on Power Consumption, Thermal Stability, and Reliability of Aluminum Nitride Resistive Random Access Memory Devices

(2019) Chun-Cheng Lin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics

(2019) Yawar Abbas et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Effect of growth temperature on AlN thin films fabricated by atomic layer deposition

(2018) Yong Kim et al.   CERAMICS INTERNATIONAL

Optimization of the annealing process and nanoscale piezoelectric properties of (002) AlN thin films

(2017) Bangran Fu et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

High-Speed and Low-Energy Nitride Memristors

(2016) Byung Joon Choi et al.   ADVANCED FUNCTIONAL MATERIALS

Influence of carrier concentration on the resistive switching characteristics of a ZnO-based memristor

(2016) Yihui Sun et al.   Nano Research

Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

(2015) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

All-Metal-Nitride RRAM Devices

(2015) Zhiping Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Endurance improvement due to rapid thermal annealing (RTA) of a TaO x thin film in an oxygen ambient

(2015) Junghyup Hong et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Highly uniform resistive switching in SiN nanorod devices fabricated by nanosphere lithography

(2014) Hee Woong Shin et al.   Applied Physics Express

A Review on Conduction Mechanisms in Dielectric Films

(2014) Fu-Chien Chiu   Advances in Materials Science and Engineering

Effect of Electrode Materials on AlN-Based Bipolar and Complementary Resistive Switching

(2013) Chao Chen et al.   ACS Applied Materials & Interfaces

Microscopic Modeling of Electrical Stress-Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics

(2013) Luca Vandelli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of dielectric crystallinity on the resistive switching characteristics of ZrTiOx-based metal–insulator-metal devices

(2013) Chia-Chun Lin et al.   MICROELECTRONIC ENGINEERING

Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories

(2013) Jui-Yuan Chen et al.   NANO LETTERS

TaOx-based resistive switching memories: prospective and challenges

(2013) Amit Prakash et al.   Nanoscale Research Letters

A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50-$\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture

(2012) X. A. Tran et al.   IEEE ELECTRON DEVICE LETTERS

Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide

(2012) Jheng-Jie Huang et al.   IEEE ELECTRON DEVICE LETTERS

Structural and electrical properties of AlN films deposited using reactive RF magnetron sputtering for solar concentrator application

(2011) A. Kale et al.   APPLIED SURFACE SCIENCE

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

(2011) Daniele Ielmini   IEEE TRANSACTIONS ON ELECTRON DEVICES

Developmental mechanism for the resistance change effect in perovskite oxide-based resistive random access memory consisting of Bi2Sr2CaCu2O8+δ bulk single crystal

(2011) A. Hanada et al.   JOURNAL OF APPLIED PHYSICS

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

The influence of crystallinity on the resistive switching behavior of TiO2

(2011) H. Mähne et al.   MICROELECTRONIC ENGINEERING

The Scherrer equation versus the 'Debye-Scherrer equation'

(2011) Uwe Holzwarth et al.   Nature Nanotechnology

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

(2010) M. Kanamura et al.   IEEE ELECTRON DEVICE LETTERS