Ferroelectric-field-effect-enhanced resistance performance of TiN/Si:HfO2/oxygen-deficient HfO2/TiN resistive switching memory cells

Investigation of chemical distribution in the oxide bulk layer in Ti/HfO2/Pt memory devices using x-ray photoelectron spectroscopy

(2015) Ran Jiang et al.   APPLIED PHYSICS LETTERS

On the structural origins of ferroelectricity in HfO2 thin films

(2015) Xiahan Sang et al.   APPLIED PHYSICS LETTERS

Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory

(2015) Umesh Chand et al.   APPLIED PHYSICS LETTERS

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

(2015) Patrick D. Lomenzo et al.   JOURNAL OF APPLIED PHYSICS

The effects of layering in ferroelectric Si-doped HfO2 thin films

(2014) Patrick D. Lomenzo et al.   APPLIED PHYSICS LETTERS

Role of oxygen vacancies in resistive switching in Pt/Nb-doped SrTiO3

(2014) Jinho Park et al.   APPLIED PHYSICS LETTERS

Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories

(2014) S. U. Sharath et al.   APPLIED PHYSICS LETTERS

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

(2014) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Impedance spectroscopic analysis on effects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin films on their bipolar resistive switching

(2014) Ji-Wook Yoon et al.   Nanoscale

Characterization of electroforming-free titanium dioxide memristors

(2013) John Paul Strachan et al.   Beilstein Journal of Nanotechnology

Hafnium Oxide Based CMOS Compatible Ferroelectric Materials

(2013) U. Schroeder et al.   ECS Journal of Solid State Science and Technology

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

(2012) Stefan Mueller et al.   ADVANCED FUNCTIONAL MATERIALS

Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

(2012) Johannes Muller et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in yttrium-doped hafnium oxide

(2011) J. Müller et al.   JOURNAL OF APPLIED PHYSICS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

(2010) Ruth Muenstermann et al.   ADVANCED MATERIALS

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

(2010) L. Goux et al.   APPLIED PHYSICS LETTERS

Inflexion behaviour ofVFBwhile tuning the oxide thickness in HfO2-based capacitors

(2010) Ran Jiang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Interfacial growth at the HfO2/Si interface during annealing in oxygen ambient

(2009) Ran Jiang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Behavior of stress induced leakage current in thin HfO[sub x]N[sub y] films

(2008) Ran Jiang et al.   APPLIED PHYSICS LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today