The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE

Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

(2018) Naoki Sawada et al.   Applied Physics Express

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

(2018)   JOURNAL OF APPLIED PHYSICS

Wide range doping control and defect characterization of GaN layers with various Mg concentrations

(2018)   JOURNAL OF APPLIED PHYSICS

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

(2017) Masahiro Horita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

(2016) Shota Kaneki et al.   APPLIED PHYSICS LETTERS

Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy

(2016) A. Y. Polyakov et al.   JOURNAL OF APPLIED PHYSICS

Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

(2016) Guanxi Piao et al.   JOURNAL OF CRYSTAL GROWTH

1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

(2015) Tohru Oka et al.   Applied Physics Express

Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates

(2015) Takeshi Tanaka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Recent progress of GaN power devices for automotive applications

(2014) Tetsu Kachi   JAPANESE JOURNAL OF APPLIED PHYSICS

Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films

(2014) J. Yang et al.   JOURNAL OF APPLIED PHYSICS

High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

(2014) Erin C. H. Kyle et al.   JOURNAL OF APPLIED PHYSICS

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

(2014) M. A. Reshchikov et al.   PHYSICAL REVIEW B

Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

(2014) J. L. Lyons et al.   PHYSICAL REVIEW B

High Voltage Vertical GaN p-n Diodes With Avalanche Capability

(2013) Isik C. Kizilyalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Role of nitrogen vacancies in the luminescence of Mg-doped GaN

(2012) Qimin Yan et al.   APPLIED PHYSICS LETTERS

Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors

(2012) John L. Lyons et al.   PHYSICAL REVIEW LETTERS

Planar Nearly Ideal Edge-Termination Technique for GaN Devices

(2011) A. Merve Ozbek et al.   IEEE ELECTRON DEVICE LETTERS

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

(2008) Masahito Kodama et al.   Applied Physics Express

Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates

(2008) Yuki Niiyama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS