Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies

Published 2013 View Full Article

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Title
Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 51, Issue 4S, Pages 04DF04
Publisher
Japan Society of Applied Physics
Online
2013-12-21
DOI
10.7567/jjap.51.04df04

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