Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

Study of Proton Irradiation Effects on p- and n-Type GaN Based-on Two-Terminal Resistance Dependence on 380keV Proton Fluence

(2014) Hiroshi OKADA et al.   IEICE TRANSACTIONS ON ELECTRONICS

Impact of proton irradiation on deep level states in n-GaN

(2013) Z. Zhang et al.   APPLIED PHYSICS LETTERS

Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs

(2013) Jin Chen et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Review of radiation damage in GaN-based materials and devices

(2013) Stephen J. Pearton et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy

(2012) Z. Zhang et al.   APPLIED PHYSICS LETTERS

Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy

(2012) Christophe A. Hurni et al.   APPLIED PHYSICS LETTERS

Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy

(2012) Z. Zhang et al.   APPLIED PHYSICS LETTERS

Role of nitrogen vacancies in the luminescence of Mg-doped GaN

(2012) Qimin Yan et al.   APPLIED PHYSICS LETTERS

Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors

(2012) B. D. Weaver et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Radiation effects in GaN materials and devices

(2012) Alexander Y. Polyakov et al.   Journal of Materials Chemistry C

NpN-GaN/InxGa1−xN/GaN heterojunction bipolar transistor on free-standing GaN substrate

(2011) Zachary Lochner et al.   APPLIED PHYSICS LETTERS

AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy

(2011) Ajay Raman et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Deep level investigation of p-type GaN using a simple photocurrent technique

(2009) A. Armstrong et al.   JOURNAL OF APPLIED PHYSICS

Threshold displacement energy in GaN:Ab initiomolecular dynamics study

(2009) H. Y. Xiao et al.   JOURNAL OF APPLIED PHYSICS

Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy

(2008) A. R. Arehart et al.   APPLIED PHYSICS LETTERS

Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

(2008) A. Armstrong et al.   JOURNAL OF APPLIED PHYSICS