Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN

Published 2008 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 17, Pages 172112
Publisher
AIP Publishing
Online
2008-11-09
DOI
10.1063/1.3005640
References
View 1 related references

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.