Identification of origin of E C –0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy

Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates

(2019) Kenji Shiojima et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

(2018) Naoki Sawada et al.   Applied Physics Express

Iron as a source of efficient Shockley-Read-Hall recombination in GaN

(2016) Darshana Wickramaratne et al.   APPLIED PHYSICS LETTERS

Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors

(2015) Y. S. Puzyrev et al.   APPLIED PHYSICS LETTERS

Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

(2015) Masaaki Kuzuhara et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates

(2014) Hui Nie et al.   IEEE ELECTRON DEVICE LETTERS

Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

(2014) Matteo Meneghini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

(2013) A. Sasikumar et al.   APPLIED PHYSICS LETTERS

Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

(2013) D. W. Cardwell et al.   APPLIED PHYSICS LETTERS

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

(2013) Keisuke Shinohara et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigation of deep levels in bulk GaN material grown by halide vapor phase epitaxy

(2013) Tran Thien Duc et al.   JOURNAL OF APPLIED PHYSICS

Deep level transient spectroscopy signatures of majority traps in GaN p–n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates

(2009) E. PŁaczek-Popko et al.   PHYSICA B-CONDENSED MATTER

Electronic properties of the EC-0.6 eV electron trap in n-type GaN

(2008) Julien Pernot et al.   JOURNAL OF APPLIED PHYSICS