Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3456561
Keywords
aluminium compounds; current density; electron density; electron mobility; gallium compounds; high electron mobility transistors; III-V semiconductors; indium compounds; MOCVD; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors
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Funding
- German Federal Ministry of Defense (BMVg)
- Federal Office of Defense Technology and Procurement (BWB)
- Bundeswehr Technical Center for Information Technology and Electronics [WTD 81]
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Quaternary InAlGaN semiconductors with AlN mole fractions between 40% and 81% and respective InN contents of 7% and 19% including InAlN as a ternary border case have been grown by plasma-assisted molecular beam epitaxy. The electron mobility in InAlGaN-based heterostructures increases with Ga concentration in the barrier up to 1460 cm(2)/V s at a sheet electron density of 1.9x10(13) cm(-2). An advanced spacer comprising an AlN/GaN/AlN triple-layer sequence is inserted between the GaN-buffer and the InAlGaN-barrier. Transistors with thin quaternary barrier show a large current density of 2.3 A/mm and an excellent transconductance of 675 mS/mm. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456561]
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