Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

(2012) Stephen W. Kaun et al.   APPLIED PHYSICS LETTERS

InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment

(2012) D. Maier et al.   IEEE ELECTRON DEVICE LETTERS

Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts

(2012) Guowang Li et al.   IEEE ELECTRON DEVICE LETTERS

RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate

(2011) F. Lecourt et al.   ELECTRONICS LETTERS

Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

(2010) Ronghua Wang et al.   IEEE ELECTRON DEVICE LETTERS

Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures

(2009) Remziye Tülek et al.   JOURNAL OF APPLIED PHYSICS

Fast, micrometer scale characterization of group-III nitrides with laboratory X-ray diffraction

(2009) Alois Krost et al.   MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING

Barrier-Layer Scaling of InAlN/GaN HEMTs

(2008) F. Medjdoub et al.   IEEE ELECTRON DEVICE LETTERS

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

(2008) M. Gonschorek et al.   JOURNAL OF APPLIED PHYSICS