Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3026541
Keywords
aluminium compounds; III-V semiconductors; indium compounds; molecular beam epitaxial growth; pyrolysis; semiconductor growth; stoichiometry; surface morphology
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Funding
- Spanish Ministry of Education [NAN04/09109/C04/2, Consolider-CSD 2006-19]
- Community of Madrid [S-0505/ESP-0200]
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Indium incorporation and surface morphology of InAlN layers grown on (0001) GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the impinging In flux and the substrate temperature in the 450-610 degrees C range. In incorporation was found to decrease with substrate temperature due to thermal decomposition of the growing layer, while for a given temperature it increased with the impinging In flux until stoichiometry was reached at the growth front. The InN losses during growth followed an Arrhenius behavior characterized by an activation energy of 2.0 eV. A growth diagram highly instrumental to identify optimum growth conditions was established.
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