Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation

Published 2010 View Full Article

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Title
Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation
Authors
Keywords
-
Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 39, Issue 5, Pages 499-503
Publisher
Springer Nature
Online
2010-03-10
DOI
10.1007/s11664-010-1139-y

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