Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate

Nonpolar and Semipolar Group III Nitride-Based Materials

(2011) J. S. Speck et al.   MRS BULLETIN

Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance

(2009) H. Shen et al.   APPLIED PHYSICS LETTERS

Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well

(2009) H. Shen et al.   APPLIED PHYSICS LETTERS

A System for Simulation of Tip Evolution Under Field Evaporation

(2009) BP Geiser et al.   MICROSCOPY AND MICROANALYSIS

Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures

(2008) M. J. Galtrey et al.   JOURNAL OF APPLIED PHYSICS

Specimen Preparation for Cross-Section Atom Probe Analysis

(2008) D Lawrence et al.   MICROSCOPY AND MICROANALYSIS

Diffusion of TaN and HfO into TiN in a Metal Gate Stack

(2008) D Reinhard et al.   MICROSCOPY AND MICROANALYSIS

Quantitative binomial distribution analyses of nanoscale like‐solute atom clustering and segregation in atom probe tomography data

(2008) Michael P. Moody et al.   MICROSCOPY RESEARCH AND TECHNIQUE