Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors

(2011) Stephen W. Kaun et al.   Applied Physics Express

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

(2011) M. Ťapajna et al.   APPLIED PHYSICS LETTERS

Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures

(2011) A. Asgari et al.   JOURNAL OF APPLIED PHYSICS

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions

(2010) Weiguo Hu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

MBE growth of high conductivity single and multiple AlN/GaN heterojunctions

(2010) Yu Cao et al.   JOURNAL OF CRYSTAL GROWTH

Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors

(2009) Fabio Alessio Marino et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures

(2009) Remziye Tülek et al.   JOURNAL OF APPLIED PHYSICS

Dislocation scattering in AlxGa1−xN∕GaN heterostructures

(2008) Xiaoqing Xu et al.   APPLIED PHYSICS LETTERS

55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge

(2008) J.S. Moon et al.   IEEE ELECTRON DEVICE LETTERS