Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

Published 2013 View Full Article

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Title
Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 52, Issue 8S, Pages 08JN14
Publisher
IOP Publishing
Online
2013-05-31
DOI
10.7567/jjap.52.08jn14

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