Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures

Surface roughness scattering in two dimensional electron gas channel

(2010) B. Liu et al.   APPLIED PHYSICS LETTERS

Scattering mechanism in modulation-doped shallow two-dimensional electron gases

(2010) D. Laroche et al.   APPLIED PHYSICS LETTERS

Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon

(2010) F. E. Rougieux et al.   JOURNAL OF APPLIED PHYSICS

Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method

(2010) S. B. Lisesivdin et al.   JOURNAL OF APPLIED PHYSICS

Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates

(2010) Seshadri Kolluri et al.   JOURNAL OF APPLIED PHYSICS

High temperature electron transport properties in AlGaN/GaN heterostructures

(2010) H. Tokuda et al.   JOURNAL OF APPLIED PHYSICS

Electron transport in two dimensional electron gas formed at the heterojunction of AlxGa(1−x)N/GaN at microwave frequencies

(2010) A. Chakraborty et al.   MICROELECTRONICS RELIABILITY

The effect of temperature on the recombination rate of AlGaN/GaN light emitting diodes

(2010) Sara Shishehchi et al.   OPTICAL AND QUANTUM ELECTRONICS

High performances III-Nitride Quantum Dot infrared photodetector operating at room temperature

(2010) A. Asgari et al.   OPTICS EXPRESS

The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

(2009) A Teke et al.   NEW JOURNAL OF PHYSICS

Room-temperature Transport Properties of High Drift Mobility Two-dimensional Electron Gas Confined in a Strained Si Quantum Well

(2008) Maksym Myronov et al.   Applied Physics Express

Dislocation scattering in AlxGa1−xN∕GaN heterostructures

(2008) Xiaoqing Xu et al.   APPLIED PHYSICS LETTERS

Self-consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates using photo-Hall effect measurements

(2008) S B Lisesivdin et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements

(2008) S B Lisesivdin et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY