Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

Gate Oxides Beyond SiO2

(2011) Darrell G. Schlom et al.   MRS BULLETIN

Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density

(2009) Yasuhiro Oshima et al.   APPLIED PHYSICS LETTERS

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Surface passivation and implications on high mobility channel performance (Invited Paper)

(2009) C.L. Hinkle et al.   MICROELECTRONIC ENGINEERING

S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates

(2008) F. S. Aguirre-Tostado et al.   APPLIED PHYSICS LETTERS

Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators

(2008) Byungha Shin et al.   APPLIED PHYSICS LETTERS

Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate

(2008) C. Y. Kim et al.   APPLIED PHYSICS LETTERS

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

(2008) S. Koveshnikov et al.   APPLIED PHYSICS LETTERS

Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high-k gate dielectrics using x-ray photoelectron spectroscopy

(2008) H. J. Oh et al.   APPLIED PHYSICS LETTERS

In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric

(2008) E. O’Connor et al.   APPLIED PHYSICS LETTERS

Thermal stability of electrical and structural properties of GaAs-based metal-oxide-semiconductor capacitors with an amorphous LaAlO3 gate oxide

(2008) S. Koveshnikov et al.   APPLIED PHYSICS LETTERS

Inversion mode n-channel GaAs field effect transistor with high-k/metal gate

(2008) J. P. de Souza et al.   APPLIED PHYSICS LETTERS

Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric

(2008) Ning Li et al.   APPLIED PHYSICS LETTERS

Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As

(2008) M. Kobayashi et al.   APPLIED PHYSICS LETTERS

Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters

(2008) Y. C. Chang et al.   APPLIED PHYSICS LETTERS

Indium stability on InGaAs during atomic H surface cleaning

(2008) F. S. Aguirre-Tostado et al.   APPLIED PHYSICS LETTERS

Achieving 1nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As

(2008) K. Y. Lee et al.   APPLIED PHYSICS LETTERS

In situ study of surface reactions of atomic layer deposited LaxAl2−xO3 films on atomically clean In0.2Ga0.8As

(2008) F. S. Aguirre-Tostado et al.   APPLIED PHYSICS LETTERS

Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2

(2008) M. Houssa et al.   APPLIED PHYSICS LETTERS

Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces

(2008) Justin C. Hackley et al.   APPLIED PHYSICS LETTERS

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

(2008) T. D. Lin et al.   APPLIED PHYSICS LETTERS

Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

(2008) A. M. Sonnet et al.   APPLIED PHYSICS LETTERS

Arsenic-dominated chemistry in the acid cleaning of InGaAs and InAlAs surfaces

(2008) Yun Sun et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

Capacitance-voltage characterization of GaAs–Al2O3 interfaces

(2008) G. Brammertz et al.   APPLIED PHYSICS LETTERS

Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2

(2008) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

(2008) Hiroshi Matsubara et al.   APPLIED PHYSICS LETTERS

Control of high-k/germanium interface properties through selection of high-k materials and suppression of GeO volatilization

(2008) Koji Kita et al.   APPLIED SURFACE SCIENCE

Fabrication of Self-Aligned Enhancement-Mode $ \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With $ \hbox{TaN/HfO}_{2}\hbox{/AlN}$ Gate Stack

(2008) D. Shahrjerdi et al.   IEEE ELECTRON DEVICE LETTERS

30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz

(2008) Dae-Hyun Kim et al.   IEEE ELECTRON DEVICE LETTERS

Screening of Oxide/GaAs Interfaces for MOSFET Applications

(2008) M. Passlack et al.   IEEE ELECTRON DEVICE LETTERS

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

(2008) Duygu Kuzum et al.   IEEE ELECTRON DEVICE LETTERS

Characteristics of Atomic-Layer-Deposited Al[sub 2]O[sub 3] High-k Dielectric Films Grown on Ge Substrates

(2008) Chao-Ching Cheng et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Effects of Surface Treatments on Interfacial Self-Cleaning in Atomic Layer Deposition of Al[sub 2]O[sub 3] on InSb

(2008) C. H. Hou et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Chemical Bonding, Interfaces, and Defects in Hafnium Oxide∕Germanium Oxynitride Gate Stacks on Ge(100)

(2008) Yasuhiro Oshima et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation

(2008) Annelies Delabie et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

High-k/Ge MOSFETs for future nanoelectronics

(2008) Yoshiki Kamata   Materials Today

Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation

(2007) Jungwoo Oh et al.   THIN SOLID FILMS