Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters

Published 2008 View Full Article

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Title
Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 7, Pages 072901
Publisher
AIP Publishing
Online
2008-02-20
DOI
10.1063/1.2883967

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